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| VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 2800 6830 10730 87x103 0.8 0.05 V A A A V m Rectifier Diode 5SDD 60N2800 Doc. No. 5SYA1155-01 Jan. 05 * Patented free-floating silicon technology * Very low on-state losses * Optimum power handling capability Blocking Maximum rated values 1) Parameter Repetitive peak reverse voltage Non - repetitive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM f = 50 Hz, tp = 10ms, Tj = 160C f = 5 Hz, tp = 10ms, Tj = 160C Value 2000 2800 Unit V V Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 160C min typ max 400 Unit mA Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 81 typ 90 max 108 50 100 Unit kN m/s m/s 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 90 kN, Ta = 25 C min 34.3 56 typ max 2.8 34.9 Unit kg mm mm mm Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 60N2800 On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t tp = 8.3 ms, Tj = 160C, VR = 0 V tp = 10 ms, Tj = 160C, VR = 0 V 50 Hz, Half sine wave, TC = 90 C min typ max 6830 10730 87x10 38.5x10 95x10 38x10 3 Unit A A A A2s A A2s 6 3 6 Characteristic values Parameter On-state voltage Threshold voltage Slope resistance Symbol Conditions VF V(T0) rT IF = 5000 A, Tj = 160C Tj = 160C IT = 2500...7500 A min typ max 1.05 0.8 0.05 Unit V V m Switching Characteristic values Parameter Symbol Conditions Qrr diF/dt = -10 A/s, VR = 200 V min typ max 6300 Unit As Recovery charge IFRM = 4000 A, Tj = 160C ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1155-01 Jan. 05 page 2 of 6 5SDD 60N2800 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min typ max 160 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 81...108 kN Anode-side cooled Fm = 81...108 kN Cathode-side cooled Fm = 81...108 kN Double-side cooled Fm = 81...108 kN Single-side cooled Fm = 81...108 kN -40 min typ 175 max 5.7 11.4 11.4 1 2 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = R th i (1 - e-t/ i ) i =1 i Rth i(K/kW) i(s) 1 3.731 0.8113 2 1.250 0.1014 3 0.434 0.0089 4 0.292 0.0015 Fig. 1 Transient thermal impedance junction-tocase. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1155-01 Jan. 05 page 3 of 6 5SDD 60N2800 5SDD 60N2800 Fig. 2 On-state characteristics. Pf (W) Fig. 3 On-state characteristics. Fig. 4 On-state power losses vs average on-state current. Fig. 5 Max. permissible case temperature vs average on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1155-01 Jan. 05 page 4 of 6 5SDD 60N2800 5SDD 60N2800 IFSM [kA] 150 140 130 120 110 100 90 80 70 60 50 100 101 102 5SDD 60N2800 i2dt [MA2s] 50 IFSM (kA) 90 80 70 IFSM Tj = 160C 48 46 44 Tj = 160C 60 42 50 40 38 36 34 40 30 20 10 0 5SDD 60N2800 i2t 32 30 1 2 3 4 5 6 7 8 10 20 t [ms] np Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. Qrr (As) 30000 20000 I FRM = 4000 A Tj = Tjmax Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. 700 600 500 400 300 200 I RM(A) I FRM = 4000 A Tj = Tjmax 104 8000 7000 6000 5000 4000 3000 2000 1 5SDD 60N2800 30 1 2 3 4 5 6 7 8 910 20 2 3 4 5 6 7 8 9 10 20 30 30 -di F/dt (A/s) -diF /dt(A/s) Fig. 8 Recovery charge vs. decay rate of on-state current. Fig. 9 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1155-01 Jan. 05 page 5 of 6 5SDD 60N2800 102 80 70 60 50 40 5SDD 60N2800 H Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr 5SYA 2020 5SYA 2029 5SYA 2036 Titel Design of RC-Snubbers for Phase Control Applications Designing Large Rectifiers with High Power Diodes Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1155-01 Jan. 05 |
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